Pattern data correcting method, photo mask manufacturing method, semiconductor device manufacturing method, program and semiconductor device

A computer program product configured to store program instructions for execution on a computer and used for correcting pattern data for a semiconductor device, the program instructions causing the computer to perform:

• acquiring pattern data for a lower layer, pattern data for an upper layer, and pattern data for a connecting layer containing connecting patterns to connect patterns contained in the lower layer and patterns contained in the upper layer;
• grouping patterns contained in the lower layer, the upper layer, and the connecting layer into a plurality of groups in which patterns in the same group are to be set at the same electric potential;
• acquiring a first distance between one edge of one connecting pattern contained in one group and an edge of a pattern contained in another group;
• and
• moving the one edge in a direction in which a size of the one connecting pattern increases, based on the first distance.

A semiconductor device having a plurality of groups in which patterns in the same group are to be set at the same electric potential, each of the groups comprising:

• a lower layer pattern contained in a lower layer;
• an upper layer pattern contained in an upper layer;
• a connecting pattern contained in a connecting layer between the lower layer and the upper layer, and adopted to connect the lower layer pattern and the upper layer pattern to each other,
• wherein a position of one edge of one connecting pattern contained in one group is determined depending on a first distance between the one edge and an edge of a pattern contained in another group.