High dielectric constant transition metal oxide materials
AssigneeMicron Technology, Inc.
InventorsJiutao Li, Shuang Meng
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Abstract
A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.
Claims59
A method of forming a high k material comprising implanting nitrogen into a high dielectric (K) constant transition metal oxide material.
A method of forming a capacitor dielectric comprising
- forming a transition metal oxide layer with a predominantly monoclinic crystal structure over a capacitor electrode;
- and
- doping the transition metal oxide layer with a non-metal to convert the predominantly monoclinic crystal structure into a predominantly tetragonal crystal structure.
A method of forming a capacitor on an integrated circuit comprising
- forming a first capacitor electrode;
- depositing a high dielectric constant material over the first capacitor electrode;
- implanting the high dielectric constant material with nitrogen to form a capacitor dielectric that comprises between about 1 atomic % and 20 atomic % nitrogen;
- and
- forming a second capacitor electrode over the capacitor dieletric.
A capacitor dielectric material for an integrated circuit comprising a nitrogen doped transition metal oxide layer with a tetragonal crystal structure, wherein the dielectric material has a dielectric constant of greater than 32.
A high dielectric constant material for an integrated circuit comprising nitrogen-doped hafnium oxide with a tetragonal structure.
An integrated circuit with a capacitor array comprising:
- a plurality of conductive bottom electrodes;
- a dielectric layer extending over each bottom electrode, wherein the dielectric layer comprises a transition metal oxide with a non-metal dopant and has a dielectric constant substantially at least 30% higher than the transition metal oxide without the dopant;
- and
- a conductive upper electrode overlying over each dielectric layer.
A capacitor for an integrated circuit comprising
- a bottom electrode over a substrate;
- a dielectric layer overlying the bottom electrode, wherein the dielectric layer comprises a group IVB metal oxide and a non-metal dopant in a tetragonal crystal structure;
- and
- an upper electrode extending over the dielectric layer.
Dependencies are inferred from the claim text.