Hybrid dielectric film
AssigneeDielectric Systems, Inc.
InventorsChieh Chen, Atul Kumar, Yuri Pikovsky, Chung Lee
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Abstract
A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.
Claims42
A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit, the method comprising:
- forming a first dielectric layer on the substrate via chemical vapor deposition;
- and
- forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic polymer dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.
A method of forming a hybrid dielectric layer on a substrate via a chemical vapor deposition (CVD) system, the method comprising:
- introducing the substrate into the CVD system;
- isolating an atmosphere within the CVD system relative to an atmosphere outside of the CVD system;
- depositing a first dielectric film via CVD onto the substrate in the CVD system;
- and
- depositing a second dielectric film onto the first dielectric film via CVD, wherein one of the first dielectric film and the second dielectric film is an organic film, wherein the other of the first dielectric film and the second dielectric film is an inorganic film, and wherein the substrate isolated from the atmosphere outside of the CVD system during and between the depositing of the first and second dielectric films.
A chemical vapor deposition (CVD) system for forming a hybrid organic/inorganic dielectric film on a substrate, the system comprising:
- a plurality of chambers for isolating the substrate from an outside atmosphere during formation of the hybrid organic/inorganic dielectric film, wherein the plurality of chambers includes a first chamber for depositing a low dielectric constant inorganic material onto the substrate and a second chamber for depositing a low dielectric constant organic material onto the substrate, and wherein the first chamber is in fluid communication with the second chamber;
- an inorganic precursor source configured to provide a precursor to the first chamber for forming a film of the low dielectric constant inorganic material via a CVD technique;
- and
- an organic precursor source configured to provide a precursor to the second chamber for forming a film of the organic material via a CVD technique.
A chemical vapor deposition (CVD) system, comprising a controller having memory, a processor, and a set of instructions stored in the memory and executable by the processor to:
- deposit a first dielectric film via CVD onto the substrate in the CVD system;
- and
- deposit a second dielectric film via CVD onto the first dielectric film in the CVD system, wherein one of the first dielectric film and the second dielectric film is a low dielectric constant organic film, wherein the other of the first dielectric film and the second dielectric film is a low dielectric constant inorganic film, and wherein the atmosphere within the CVD system is isolated from an atmosphere outside of the CVD system during and between the depositing of the first and second dielectric films.
A chemical vapor deposition (CVD) system configured to form a hybrid inorganic/organic dielectric film on a substrate, the CVD system comprising a controller having memory, a processor and a set of instructions stored in the memory and executable by the processor to:
- form a first dielectric layer on the substrate via CVD;
- and
- form a second dielectric layer on the first dielectric layer via CVD, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic polymer dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.
Dependencies are inferred from the claim text.