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US 2006/0051971 A1Published application
Composite dielectric forming methods and composite dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Ahn, Leonard Forbes
Life of this patent
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Abstract
A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.
Claims25
A composite dielectric forming method comprising:
- chemisorbing at least one monolayer of a first material on and in contact with a conductive or semiconductive substrate, the first material containing hafnium;
- treating at least some of the chemisorbed first material and forming an oxide of hafnium;
- chemisorbing on the hafnium oxide at least one monolayer of a second material containing lanthanum;
- and
- treating at least some of the chemisorbed second material and forming an oxide of lanthanum.
2 more elements
A composite dielectric forming method comprising:
- chemisorbing at least one monolayer of a first material over a substrate, the first material containing a first metal;
- treating at least some of the chemisorbed first material and forming an oxide of the first metal;
- chemisorbing on the first metal oxide at least one monolayer of a second material containing a second metal;
- and
- treating at least some of the chemisorbed second material and forming an oxide of the second metal, one of the first and second metals containing hafnium and the other containing lanthanum, the lanthanum-containing metal oxide containing crystalline lantharium oxide.
2 more elements
A composite dielectric forming method comprising:
- chemisorbing one monolayer of a first material over a substrate, the first material containing hafnium;
- treating at least some of the chemisorbed first material and forming a thermally stable, crystalline oxide of hafnium;
- chemisorbing on the first metal oxide at least one monolayer of a second material containing lanthanum;
- and
- treating at least some of the chemisorbed second material and forming an oxide of the lanthanum.
2 more elements
Dependencies are inferred from the claim text.