Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element

A ferroelectric ceramic film, comprising:

• a stack in which a first crystal layer and a second crystal layer are sequentially layered,
• the second crystal layer having a melting point lower than a melting point of the first crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Pb is provided in an A-site.

A ferroelectric ceramic film, comprising:

• a crystal stack in which a first crystal layer, a second crystal layer, and a third crystal layer are sequentially layered,
• the second crystal layer having a melting point lower than melting points of the first crystal layer and the third crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Pb is provided in an A-site.

A ferroelectric ceramic film, comprising:

• a stack in which a first crystal layer and a second crystal layer are sequentially layered,
• the second crystal layer having a melting point higher than a melting point of the first crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Pb is provided in an A-site.

A ferroelectric ceramic film, comprising:

• a stack in which a first crystal layer and a second crystal layer are sequentially layered,
• the second crystal layer having a melting point lower than a melting point of the first crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Si is provided in a B-site.

A ferroelectric ceramic film, comprising:

• a crystal stack in which a first crystal layer, a second crystal layer, and a third crystal layer are sequentially layered,
• the second crystal layer having a melting point lower than melting points of the first crystal layer and the third crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Si or Ge is provided in a B-site.

A ferroelectric ceramic film, comprising:

• a stack in which a first crystal layer and a second crystal layer are sequentially layered,
• the second crystal layer having a melting point higher than a melting point of the first crystal layer, the first crystal layer having a PZT-based perovskite structure, and the second crystal layer having ABO-type oxides in which Si or Ge is provided in a B-site.