US 2006/0050753 A1 · Quantum nanostructure semiconductor laser

Abstract

A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength stability. The laser has a stripe-shaped ridge with a plurality of V-grooves formed on a compound semiconductor substrate in the direction of laser beam emisson, with the V-grooves being arrayed in parallel, with each V-groove extending orthogonally to the direction of laser beam emission. On the ridge, an optical waveguide is provided that comprises a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process. The quantum wires are formed to a finite length corresponding to the stripe width of the laser beam, and are each located at a position corresponding to a V-groove, thereby constituting the laser active region. The optical waveguide is trapezoidal in shape, and has a peripheral sidewall that is at least as high as a height at which the quantum wires are located, and is exposed or covered only by an insulation layer.

Claims14

Dependent claims

A quantum nanostructure semiconductor laser, comprising:

a stripe-shaped ridge having a plurality of V-grooves formed on a compound semiconductor substrate in a direction of laser beam emission, the V-grooves being arrayed in parallel along a surface of the ridge in the direction of laser beam emission with each V-groove extending orthogonally to the direction of laser beam emission;
and
an optical waveguide on the ridge that includes a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process, each of the plurality of quantum wires being formed to a finite length corresponding to a stripe width of a laser beam emission at a location corresponding to a V-groove to constitute a laser active region, the optical waveguide having a trapezoidal shape and a peripheral sidewall that is at least as high as a height at which the quantum wires are located and is exposed or is not covered except by an insulation layer.

A quantum nanostructure semiconductor laser, comprising:

a stripe-shaped window that exposes a compound semiconductor layer and extends in a direction of laser beam emission, the window being formed in a dielectric layer formed on a compound semiconductor substrate or located between dielectric layers;
a plurality of V-grooves on a compound semiconductor substrate surface exposed by the window, the V-grooves being arrayed in parallel along a surface of the ridge in the direction of laser beam emission with each V-groove extending orthogonally to the direction of laser beam emission;
and
an optical waveguide on the plurality of V-grooves exposed by the window that includes a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process, each of the plurality of quantum wires being formed to a finite length corresponding to a stripe width of a laser beam emission at a location corresponding to a V-groove to constitute a laser active region, the optical waveguide having a trapezoidal shape and a peripheral sidewall that is at least as high as a height at which the quantum wires are located and is exposed or is not covered except by an insulation layer.

1 more element

A quantum nanostructure semiconductor laser, comprising:

a stripe-shaped ridge having a plurality of V-grooves formed on a compound semiconductor substrate in a direction of laser beam emission, the V-grooves being arrayed in parallel along a surface of the ridge in the direction of laser beam emission with each V-groove extending orthogonally to the direction of laser beam emission;
and
an optical waveguide on the ridge that includes a lower cladding layer, a plurality of quantum dots grown to or above a critical film thickness and an upper cladding layer formed in order by a crystal growth process, each of the plurality of quantum dots being formed at a location corresponding to a V-groove, the quantum dots within a location corresponding to each V-groove combining to constitute a laser active region for laser beam emission, the optical waveguide having a trapezoidal shape and a peripheral sidewall that is at least as high as a height at which the quantum dots are located and is exposed or is not covered except by an insulation layer.

A quantum nanostructure semiconductor laser, comprising:

a stripe-shaped window that exposes a compound semiconductor layer and extends in a direction of laser beam emission, the window being formed in a dielectric layer formed on a compound semiconductor substrate or located between dielectric layers;
a plurality of V-grooves on a compound semiconductor substrate surface exposed by the window, the V-grooves being arrayed in parallel along a surface of the ridge in the direction of laser beam emission with each V-groove extending orthogonally to the direction of laser beam emission;
and
an optical waveguide on the plurality of V-grooves exposed by the window that includes a lower cladding layer, a plurality of quantum dots grown to or above a critical film thickness and an upper cladding layer formed by in order by a crystal growth process, each of the plurality of quantum dots being formed at a location corresponding to a V-groove location, the quantum dots within a location corresponding to each V-groove combining to constitute a laser active region for laser beam emission, the optical waveguide having a trapezoidal shape and a peripheral sidewall that is at least as high as a height at which the quantum dots are located and is exposed or is not covered except by an insulation layer.

1 more element

Dependencies are inferred from the claim text.

Quantum nanostructure semiconductor laser

Life of this patent

Quantum nanostructure semiconductor laser

Life of this patent

Abstract

Claims14