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US 2006/0050573 A1Published application
Semiconductor memory devices and methods of delaying data sampling signal
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Hoon Kim, Joung-Yeal Kim
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Abstract
According to the example embodiments of semiconductor memory devices and the methods of delaying a sample data signal of the present invention, the delay characteristics of the data sampling signal (FRT) are adjusted based on the location of the memory unit in a row direction and/or in a column direction with respect to the input/output sense amplifier.
Claims20
A semiconductor memory device, comprising:
- a plurality of memory units;
- a data input/output line to transmit data output from the plurality of memory units;
- an input/output sense amplifier configured to sense and amplify the data;
- and
- a delay control circuit adapted to delay a first data sampling signal by generating a second data sampling signal, the second data sampling signal generated based on distance information of each of the memory units with respect to the input/output sense amplifier and the first data sampling signal, wherein data from the plurality of memory units are sampled within an active period of the second data sampling signal.
2 more elements
A semiconductor memory device, comprising:
- a plurality of memory units;
- a data input/output line to transmit data output from the plurality of memory units;
- an input/output sense amplifier configured to sense and amplify the data;
- and
- a delay control circuit adapted to delay a first data sampling signal by generating a second data sampling signal, the second data sampling signal generated based on a column address information and a row address information and the first data sampling signal, wherein data from the plurality of memory units are sampled within an active period of the second data sampling signal.
2 more elements
A method of delaying a data sampling signal of a semiconductor memory device, comprising:
- activating a column selection signal to select a memory cell from a plurality of memory units;
- transmitting data of the selected memory cell through a data input/output line;
- delaying a first data sampling signal by generating a second data sampling signal based on distance information between each of the memory units with respect to the input/output sense amplifier;
- and
- sampling the data of the selected memory within an active period of the column selection signal and an active period of the second data sampling signal.
2 more elements
Dependencies are inferred from the claim text.