Back to results
US 2006/0050545 A1Published application
Integrated memory arrangement based on resistive memory cells and production method
AssigneeInfineon Technologies AG
InventorThomas Rohr
Life of this patent
Estimating the term…
Abstract
An integrated memory arrangement based on resistive memory cells that can be changed over between a first state of high electrical resistance and a second state of low electrical resistance, each memory cell having an electrical additional capacitance that increases its capacitance, and to a production method.
Claims27
An integrated memory arrangement comprising:
- a plurality of resistive memory cells configured to be changed over between a first state of high electrical resistance and a second state of low electrical resistance, each memory cell having a first capacitance;
- and
- an electrical additional capacitance associated with each memory cell that increases the capacitance of the memory cell.
A method for producing an integrated memory arrangement comprising:
- forming a plurality of resistive memory cells having a cell capacitance;
- and
- increasing the cell capacitance of the resistive memory cells, including integrating an electrical additional capacitance with respect to each memory cell.
An integrated memory arrangement comprising:
- a plurality of resistive memory cells configured to be changed over between a first state of high electrical resistance and a second state of low electrical resistance, each memory cell having a first capacitance;
- and
- means for providing an electrical additional capacitance associated with each memory cell that increases the capacitance of the memory cell.
A random access memory cell comprising:
- a top electrode;
- a bottom electrode;
- an insulator layer positioned between the top electrode and the bottom electrode;
- an active region formed in the insulator layer;
- a dielectric region having very high dielectric constant is formed in the insulator layer, between the top electrode and the bottom electrode;
- providing an additional capacitor to the memory cell and increasing the capacitance of the memory cell.
3 more elements
Dependencies are inferred from the claim text.