Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device

A method of manufacturing a multi-purpose magnetic film structure, the method comprising:

• forming an oxide film on a substrate;
• forming a lower magnetic film on the oxide film, the lower magnetic film having a spin polarization ratio;
• forming a tunneling film on the lower magnetic film;
• forming an upper magnetic film on the tunneling film, wherein the upper magnetic film has a different spin polarization ratio from the lower magnetic film;
• forming a capping layer on the upper magnetic film;
• and
• patterning the capping layer, the upper magnetic film, the tunneling film, and the lower magnetic film.

A semiconductor memory device comprising:

• a substrate;
• a switching element formed on the substrate;
• and
• a data storing unit connected to the switching element, the data storing unit comprising:
• a lower magnetic film;
• a tunneling film formed on the lower magnetic film;
• and
• an upper magnetic film formed on the tunneling film,
• wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.