US 2006/0050255 A1 · Multiple level photolithography

Abstract

A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.

Claims11

Dependent claims

A pair of masks for use in performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, comprising:

a first mask of said pair of masks, said first mask containing a patterned area for exposing said first pattern area, and an opaque region arranged to cover at least said second pattern area at the same time;
and
a second mask of said pair of masks, said second mask containing a second patterned area for exposing said second pattern area, and an opaque region arranged to cover at least said first pattern area at the same time.

Dependencies are inferred from the claim text.

Multiple level photolithography

Life of this patent

Multiple level photolithography

Life of this patent

Abstract

Claims11