Voltage supply circuit of semiconductor device
AssigneeFujitsu Limited
InventorYoshihide Bando
Life of this patent
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Abstract
The purpose of the present invention is to decrease a leak current of a voltage supply circuit using a MOS transistor. This voltage supply circuit comprises an n-channel MOS transistor having a low threshold voltage, the drain of which is connected to the power supply voltage, and a p-channel MOS transistor, the source of which is connected to the source of the n-channel MOS transistor and which supplies a voltage vii from the drain to a load circuit. Since a voltage V gs=1 V is applied to the gate-sources of the p-channel MOS transistor when said circuit is on standby, the p-channel MOS transistor operates in a larger cut-off region than an ordinary cut-off region.
Claims14
A semiconductor device, comprising:
- a voltage supply circuit comprising:
- an n-channel MOS transistor, the drain of which is connected to a power supply;
- and
- a p-channel MOS transistor, the source of which is connected to the source of the n-channel MOS transistor, and the drain of which is connected to a load, wherein
- when said voltage supply circuit is on standby, a voltage equivalent to or higher than a power supply voltage is applied to the gate of at least the p-channel MOS transistor so that a gate-source voltage of the p-channel MOS transistor which becomes a cut-off condition is realized on the cut-off condition having a higher voltage between the gate and source of the p-channel MOS transistor.
Dependencies are inferred from the claim text.