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US 2006/0049525 A1Published application
Post passivation interconnection process and structures
AssigneeMegic Corporation
InventorsMou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Abstract
A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
Claims21
A post passivation system, comprising:
- a semiconductor substrate;
- fine line metal interconnection comprising one or more layers of metals overlying said semiconductor substrate;
- a passivation layer overlying said fine line metal interconnection, wherein said passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point on said fine line metal interconnection;
- and
- a post-passivation metal structure comprising one or more layers of metals formed over said passivation layer and connected to said at least one top level metal contact point
- wherein said passivation opening's width is larger than about 0.1 um and wherein a first sheet resistance of said post-passivation metal structure is smaller than a second sheet resistance of said fine line metal interconnection by at least 2 times.
3 more elements
A post passivation system, comprising:
- a semiconductor substrate;
- fine line metal interconnection comprising one or more layers of metals overlying said semiconductor substrate;
- a passivation layer overlying said fine line metal interconnection, wherein said passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point on said fine line metal interconnection;
- a post-passivation metal structure comprising one or more layers of metals formed over said passivation layer;
- and
- metal interconnections, formed of a same material as said post-passivation metal structure and formed over said passivation layer and connected to said at least one top level metal contact point
- wherein said passivation opening's width is larger than about 0.1 um and wherein a first sheet resistance of said post-passivation metal structure and metal interconnections is smaller than a second sheet resistance of said fine line metal interconnections by at least 2 times.
4 more elements
A post passivation system, comprising:
- a semiconductor substrate;
- fine line metal interconnection comprising one or more layers of metals overlying said semiconductor substrate;
- a passivation layer overlying said fine line metal interconnection, wherein said passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point on said fine line metal interconnection;
- a post-passivation metal structure comprising one or more layers of metals formed over said passivation layer;
- and
- metal interconnections, formed of a same material as said post-passivation metal structure and formed over said passivation layer and connected to said at least one top level metal contact point
- wherein said passivation opening's width is larger than about 0.1 um and wherein a first sheet resistance of said post-passivation metal structure and metal interconnections is smaller than 7 milliohms per square.
4 more elements
A method of forming a post passivation system, comprising:
- providing a semiconductor substrate;
- providing fine line metal interconnection comprising one or more layers of metals overlying said semiconductor substrate formed by a blanket metal deposition process;
- providing a passivation layer overlying said fine line metal interconnection, wherein said passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point on said fine line metal interconnection;
- and
- forming a post-passivation metal structure comprising one or more layers of metals formed over said passivation layer by a selective metal deposition process and connected to said at least one top level metal contact point
- wherein said at least one passivation opening is formed to a width larger than about 0.1 um and wherein a first sheet resistance of said post-passivation metal structure and metal interconnections is smaller than a second sheet resistance of said fine line metal interconnections by at least 2 times.
3 more elements
Dependencies are inferred from the claim text.