Loading patent…
AssigneeHoriba, Ltd.
InventorsNobuyuki Naka, Akihiro Katanishi, Masaaki Magari
Estimating the term…
The present invention provides a method of and a device for measuring the stress in a semiconductor material. An excitation light is irradiated on a semiconductor material formed with a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer. An internal stress of the semiconductor material is measured from peak position information of the Raman spectrum of scattered light from the irradiating point, wherein light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, a temperature of the semiconductor material is estimated from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light and the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon germanium layer are corrected by means of the estimated temperature, The internal stresses of the strained silicon layer and the silicon germanium layer are calculated from the corrected peak position information of the Raman spectra in the respective layers.
A method of measuring a stress of a semiconductor material by irradiating an excitation light on a semiconductor material formed from providing a silicon germanium layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer, and measuring an internal stress of the semiconductor material from peak position information of a Raman spectrum of scattered light from an irradiating point, characterized in that a light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, and estimating a temperature of the semiconductor material from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light of the foregoing wavelength, the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon germanium layer are corrected by means of the estimated temperature, and calculating the internal stresses of the strained silicon layer and the silicon germanium layer from the corrected peak position information of the Raman spectra in the respective layers.
A device for measuring a stress of a semiconductor material, comprising:
In a device for measuring stress in a semiconductor material format with a silicon germanium layer and a strained silicon layer in a multi-layer structure on a single crystal silicon substrate, the improvement comprising;
A method of measuring a stress of a semiconductor material by irradiating an excitation light on a semiconductor material formed from providing a silicon dioxide layer and a strained silicon layer in a multilayer structure on a single crystal silicon substrate from the direction of the strained silicon layer, and measuring an internal stress of the semiconductor material from peak position information of a Raman spectrum of scattered light from an irradiating point, characterized in that a light having a wavelength capable of reaching the single crystal silicon substrate is used as the excitation light, and estimating a temperature of the semiconductor material from a shift amount of the peak position of the Raman spectrum of the scattered light from the substrate in accordance with the irradiation of the excitation light of the foregoing wavelength, the shift amounts of the peak positions of the Raman spectra in the strained silicon layer and in the silicon dioxide layer are corrected by means of the estimated temperature, and calculating the internal stresses of the strained silicon layer and the silicon dioxide layer from the corrected peak position information of the Raman spectra in the respective layers.
Dependencies are inferred from the claim text.