Power semiconductor device for preventing punchthrough and manufacturing method thereof
AssigneeLite-On Semiconductor Corp.
InventorJong-Min Kim
Life of this patent
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Abstract
This invention presents a power semiconductor for preventing punchthrough in the channel area. For this purpose, the invention presents a power semiconductor possessing a high concentration substrate area of conduction type 1; a primary epitaxial area of conduction type 1, formed in low concentration on top of the drain area; a secondary epitaxial area of conduction type 1, formed in medium concentration on top of the primary epitaxial area and with a doping profile that is actually uniform over the thickness; multiple secondary body areas of conduction type 2, formed within the secondary epitaxial area; and two source areas of conduction type 1, formed in high concentration along both edges of the body areas.
Claims12
A Power semiconductor device for preventing punchthrough and manufacturing method thereof, comprising:
- An anti-punchthrough power semiconductor possessing a high-concentration substrate area of conduction type 1;
- A primary epitaxial area of conduction type 1, formed in low concentration on top of the substrate area;
- A secondary epitaxial area of conduction type 1, formed in medium density on top of the primary epitaxial area and with a doping profile that is actually uniform over the thickness;
- Multiple secondary body areas of conduction type 2, formed within the secondary epitaxial area;
- and
- Two source areas of conduction type 1, formed in high density along two edges of the body areas.
A Power semiconductor device for preventing punchthrough and manufacturing method thereof, comprising:
- An anti-punchthrough power semiconductor manufacturing method consisting of a stage in which the high-concentration drain area of conduction type 1 is formed;
- A stage in which the primary epitaxial area of conduction type 1 formed on top of the drain area is grown in low density using epitaxy;
- A stage in which the secondary epitaxial area of conduction type 1, formed on top of the primary epitaxial area is grown in medium density using epitaxy;
- A stage in which multiple body areas of conduction type 2 are formed within the secondary epitaxial area;
- and
- A stage in which the two source areas of conduction type 1 are formed in high density along the two edges of the body areas.
Dependencies are inferred from the claim text.