Power semiconductor device having an improved ruggedness
AssigneeLite-On Semiconductor Corp.
InventorJong-Min Kim
Life of this patent
Estimating the term…
Loading patent…
AssigneeLite-On Semiconductor Corp.
InventorJong-Min Kim
Estimating the term…
The power semiconductor of the invention consists of an n+ drain area; an n− epitaxial area; p− body and p+ body areas formed on top of the n− epitaxial area in a striped configuration; an n° epitaxial area formed on the n− epitaxial area and between the p− body and p+ body areas; a p-type edge area formed beneath the n° epitaxial area to connect with the two ends of the p+ body area; an n+ source area formed on two sides of the p-body area; gate dielectrics formed on top of the n+ body area, the p-body area, and the n° epitaxial area; and gate electrodes formed on the gate dielectrics. The p-type edge section of the power semiconductor of the invention consists of multiple sub-areas that prevent ruggedness current from concentrating on the p+ body area and thereby improve the ruggedness of the power semiconductor.
A power semiconductor device having an improved ruggedness, comprising:
A power semiconductor device having an improved ruggedness, comprising:
Dependencies are inferred from the claim text.