Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device
OwnerJung-hyun Lee, Young-soo Park +1inventors
InventorsJung-hyun Lee, Young-soo Park, Sung-ho Park
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Abstract
An antimony precursor including antimony, nitrogen and silicon, a phase-change memory device using the same, and a method of making the phase-change memory device. The phase-change memory device may have a phase-change film of a Ge2—Sb2—Te5 material including nitrogen and silicon.
Claims16
An antimony-containing compound comprising antimony, nitrogen and silicon.
A phase-change memory device comprising:
- a semiconductor substrate including a transistor structure and a storage element electrically connected to the transistor structure, wherein the storage element includes a nitrogen- and silicon-containing GST phase-change film interposed between two conductive elements.
A method of manufacturing a memory device having a phase-change film, the method comprising forming the phase-change film using an antimony precursor including antimony, nitrogen and silicon.
Dependencies are inferred from the claim text.