Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a lower conductive layer over a semiconductor substrate;
• forming an intermediate insulating layer over the lower conductive layer;
• forming an upper conductive layer over the intermediate insulating layer, such that the upper conductive layer crosses the lower conductive layer;
• and
• forming a contact hole at a crossing portion of the lower conductive layer and the upper conductive layer in the intermediate insulating layer, wherein an aspect ratio of the contact hole is greater than 0.6.

A method for manufacturing a semiconductor device comprising:

• forming a lower conductive layer over a semiconductor substrate;
• forming a first intermediate insulating layer over the lower conductive layer;
• forming a second intermediate insulating layer at least partly over the first intermediate insulating layer;
• forming an upper conductive layer over the first intermediate insulating layer,
• forming a contact hole at a crossing portion of the lower conductive layer and the upper conductive layer in the first and second intermediate insulating layers, wherein an aspect ratio of the contact hole is greater than 0.6.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer over a semiconductor substrate;
• forming a first intermediate insulating layer over the first conductive layer;
• forming a lower conductive layer over the first intermediate insulating layer;
• forming a second intermediate insulating layer over the lower conductive layer;
• partly forming a third intermediate insulating layer over the second intermediate insulating layer;
• forming an upper conductive layer over the third intermediate insulating layer,
• forming a contact hole at a crossing portion of the lower conductive layer and the upper conductive layer in the first and second intermediate insulating layers, wherein an aspect ratio of the contact hole is greater than 0.6.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer over a semiconductor substrate;
• forming a first intermediate insulating layer over the first conductive layer;
• forming a lower conductive layer over the first intermediate insulating layer;
• forming a second intermediate insulating layer over the lower conductive layer, wherein the second intermediate insulating layer has a convex portion on a top surface;
• forming an upper conductive layer over the second intermediate insulating layer;
• and
• forming a contact hole at a crossing portion of the lower conductive layer and the upper conductive layer in the second intermediate insulating layers, wherein an aspect ratio of the contact hole is greater than 0.6.

A method for manufacturing a semiconductor device comprising:

• forming a first conductive layer over a semiconductor substrate;
• forming a first intermediate insulating layer over the first conductive layer;
• forming a lower conductive layer over the first intermediate insulating layer;
• forming a second intermediate insulating layer over the lower conductive layer;
• forming an upper conductive layer over the second intermediate insulating layer;
• and
• forming a contact hole at a crossing portion of the lower conductive layer and the upper conductive layer in the second intermediate insulating layers, wherein the contact hole is located at least 1.5 μm away from a crossing portion of the first conductive layer and the lower conductive layer, and has an aspect ratio of the contact hole is greater than 0.6.