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US 2006/0049436 A1Published application
Semiconductor component with a MOS transistor
AssigneeInfineon Technologies AG
InventorsRainer Schnabel, Michael Sommer
Life of this patent
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Abstract
The source area (3) is highly doped, like the channel area, for the same conductance type. The drain area (4) is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.
Claims20
A semiconductor component with a MOS transistor formed in a semiconductor material that is doped to a first conductivity type in an area extending to an upper face, the semiconductor component comprising:
- a source area formed in the semiconductor material, the source area being more highly doped to the first conductivity type than adjacent portions of the semiconductor material;
- a drain area formed in the semiconductor material at a distance from the source area, the drain area being highly doped to a second conductivity type that is opposite of the first conductivity type;
- a gate electrode arranged on the upper face and electrically insulated from the semiconductor material between the source area and the drain area;
- and
- an electrical connection to the source area, the electrical connection further providing an electrical connection to the semiconductor material between the source area and the drain area.
2 more elements
A semiconductor device comprising:
- a semiconductor body of a first conductivity type;
- a first highly doped region of a second conductivity type disposed in the semiconductor body, the second conductivity type being different than the first conductivity type;
- a second highly doped region of the second conductivity type disposed in the semiconductor body and spaced from the first highly doped region;
- a first electrode overlying and insulated from the semiconductor body between the first highly doped region and the second highly doped region such that a transistor comprising the first highly doped region, the second highly doped region and the first electrode is formed;
- a third highly doped region of the second conductivity type disposed in the semiconductor body and spaced from the second highly doped region;
- a fourth highly doped region of the first conductivity type disposed in the semiconductor body and spaced from the third highly doped region;
- and
- a second electrode overlying and insulated from the semiconductor body between the third highly doped region and the fourth highly doped region, the second electrode being coupled to a reference supply voltage node.
5 more elements
A semiconductor device comprising:
- a semiconductor body of a first conductivity type;
- a first highly doped region of a second conductivity type disposed in the semiconductor body, the second conductivity type being different than the first conductivity type;
- a second highly doped region of the second conductivity type disposed in the semiconductor body and spaced from the first highly doped region;
- a first electrode overlying and insulated from the semiconductor body between the first highly doped region and the second highly doped region such that a transistor comprising the first highly doped region, the second highly doped region and the first electrode is formed;
- a third highly doped region of the first conductivity type disposed in the semiconductor body and spaced from the second highly doped region;
- a second electrode overlying and insulated from the semiconductor body between the second highly doped region and the third highly doped region, the second electrode being coupled to a reference supply voltage node;
- a fourth highly doped region of the second conductivity type disposed in the semiconductor body and spaced from the third highly doped region;
- and
- a third electrode overlying and insulated from the semiconductor body between the third highly doped region and the fourth highly doped region.
6 more elements
Dependencies are inferred from the claim text.