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OwnerPieter Van Der Zaag, Nigel Young +2inventors
InventorsPieter Van Der Zaag, Nigel Young, Ian French, Jeffrey Chapman
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An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel (16) defined in a layer of polycrystalline semiconductor material (10,48). The polycrystalline semiconductor material is produced by crystallising amorphous semiconductor material (2) using metal atoms (6) to promote the crystallisation process. The polycrystalline semiconductor material (10) includes an average concentration of metal atoms in the range 1.3×1018 to 7.5×1018 atoms/cm3. This enables polycrystalline semiconductor TFTs to be formed with leakage properties acceptable for use in active matrix displays using a metal induced crystallisation process of duration significantly less that previously thought necessary. Furthermore, this process duration reduction facilitates the reliable fabrication of poly-Si TFTs having bottom gates formed of metal.
An electronic device comprising a TFT, the TFT including a channel defined in a layer of polycrystalline semiconductor material produced by crystallising amorphous semiconductor material using metal atoms to promote the crystallisation process, wherein the semiconductor material includes an average concentration of the metal atoms in the range 1.3×1018 to 7.5×1018 atoms/cm3.
A method of manufacturing an electronic device including the steps of:
Dependencies are inferred from the claim text.