III-nitride based on semiconductor device with low-resistance ohmic contacts
AssigneeElite Optoelectronics Co., LTD
InventorsYun-Li Li, Heng Liu
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Abstract
The present invention utilizes high-indium-content InxGa1-xN islands (0<x≦1) formed on a top of a p-type GaN based layer to reduce contact resistance between an electrode and the p-type GaN based layer. These InxGa1-xN islands serve as channels for electrical current to flow through and dramatically reduce the contact resistance between the electrode and the p-type GaN based layer so as to improve device performance. This structure of InxGa1-xN islands can be applied to all III-nitride based electronic and optoelectronic devices requiring good p-type ohmic contacts to improve device performance.
Claims18
A GaN based semiconductor device, comprising:
- a P-type GaN based layer;
- a structure of compressively strained InxGa1-xN islands directly formed on a top of said P-type GaN based layer, wherein 0<x≦1;
- and
- an electrode formed on said compressively strained InxGa1-xN islands.
A method for fabricating a GaN based semiconductor device, comprising:
- forming a P-type GaN based layer over a substrate;
- forming a structure of compressively strained InxGa1-xN islands directly on said P-type GaN based layer, wherein 0<x≦1;
- and
- forming an electrode on said compressively strained InxGa1-xN islands.
Dependencies are inferred from the claim text.