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AssigneeBlue Photonics, Inc.
InventorsShirong Liao, Jinlin Ye, Theeradetch Detchprohm, Jyh-Chia Chen, Yea-Chuan Yeh
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A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n−1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.
A monolithic, multi-color semiconductor light emitting diode (LED), comprising a multi-bandgap, multi-quantum well (MQW) active light emitting region emits light at at least two spaced-apart wavelength bands or regions ranging from UV to red bands or regions.
A method of fabricating a monolithic semiconductor light-emitting diode (LED) which emits light of a preselected color, the method comprising forming over a substrate a multi-bandgap, multi-quantum well (MQW) active light emitting region of said device which emits light at at least two spaced-apart wavelength bands or regions, and adjusting the intensity of light emission at each of said at least two spaced-apart wavelength bands or regions such that they combine to provide said preselected color.
Dependencies are inferred from the claim text.