Method for forming integrated circuit utilizing dual semiconductors
AssigneeNoble Peak Vision Corp.
InventorsConor Rafferty, Clifford King
Life of this patent
Estimating the term…
Abstract
A monolithically integrated electronic circuit using two different semiconductor layers which are separated by a dielectric layer. Transistors formed in the upper semiconductor layer are connected to transistors formed in the lower semiconductor layer via conventional wiring. Preferably, one layer of transistors is of one polarity, N-type or P-type, while the second layer of transistors is of the opposite polarity
Claims33
An electronic integrated circuit having a plurality of different single-crystal semiconductor layers which are integrated monolithically, comprising:
- a first semiconductor layer;
- a second semiconductor layer overlapping said first semiconductor layer, said second semiconductor layer having a lower processing temperature than said first semiconductor layer, whereby transistors previously formed on said first semiconductor layer are not affected by a processing of said second semiconductor layer.
A method for forming an integrated circuit having at least two semiconductor layers, comprising:
- providing a first semiconductor substrate layer;
- forming at least one transistor on said first semiconductor substrate layer;
- depositing at least one second semiconductor seed on said first semiconductor substrate layer;
- depositing a layer of dielectric material over said first semiconductor substrate, said dielectric material surrounding each of said second semiconductor seeds;
- forming at least one second semiconductor island above each of said second semiconductor seeds;
- forming at least one transistor on said second semiconductor island;
- depositing a second layer of dielectric material over said second semiconductor islands;
- and
- operatively connecting said transistors to at least one metal connector.
An electronic integrated circuit comprising:
- a first semiconductor layer having at least one transistor;
- a second semiconductor layer of a different semiconductor material from said first semiconductor layer, said second semiconductor layer having at least one transistor;
- a layer of insulating material intermediate said first and second semiconductor layers at least partially separating said first and second semiconductor layers;
- and
- wherein said second semiconductor layer is integrated with said first semiconductor layer by growth from at least one seed element of said different semiconductor material, said seed element epitaxially grown from said first semiconductor layer at least partially through said layer of insulating material.
Dependencies are inferred from the claim text.