Nitride epitaxial layer structure and method of manufacturing the same

A method of manufacturing nitride epitaxial layer, comprising the following steps:

• (a) growing a first immediate layer of high temperature aluminum-gallium-indium-nitride (Al1-x-yGaxInyN) of appropriate thickness on a substrate in an appropriate high temperature through epitaxy, wherein x≧0, y≧0, 1≧x+y≧0;
• (b) growing a second immediate layer of low temperature aluminum-gallium-indium-nitride (Al1-x-yGaxInyN) of appropriate thickness on the first immediate layer in an appropriate low temperature through epitaxy, wherein x≧0, y≧0, 1≧x+y≧0, such that the second immediate layer is loosely structured and in amorphous lattice alignment;
• (c) performing re-crystallization of the second immediate layer in a raised temperature, such that its lattices are formed in orderly alignment;
• and
• (d) growing a high temperature nitride epitaxial layer on the second immediate layer in an appropriate temperature through epitaxy.