Optoelectronic sensor
OwnerMartin Waenyinventor
Life of this patent
Estimating the term…
Abstract
The present invention proposes a photodetector comprising a zone (2) of semiconductor material suitably doped voltage (4) and a sensing node (16), wherein the sensing node (16) is connected to a voltage sensing circuit comprising a capacitance (8) at its entrance, wherein means (9) are provided to deconnect the sensing node (16) from the voltage sensing circuit such as to temporarily sample and hold a voltage signal on said capacitance (8) of the voltage sensing circuit, and wherein that said capacitance (8) is connected to a non-linear voltage transconductance element suitable to prevent saturation of the voltage sensing circuit.
Claims11
A photodetector comprising:
- a zone (2) of semiconductor material suitably doped to collect photogenerated charges, coupled between a ground voltage (4) and a sensing node (16),
- wherein the sensing node (16) is connected to a voltage sensing circuit comprising a capacitance (8) or a parasitic capacitance (8) at its entrance,
- wherein means (9) are provided to deconnect the sensing node (16) from the voltage sensing circuit such as to temporarily sample and hold a voltage signal on said capacitance (8) of the voltage sensing circuit, and
- wherein that said capacitance (8) is connected to a non-linear voltage transconductance element suitable to prevent saturation of the voltage sensing circuit.
Dependencies are inferred from the claim text.