Dry etching apparatus, etching method, and method of forming a wiring
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japan corporation
InventorsShunpei Yamazaki, Hideomi Suzawa
Life of this patent
Estimating the term…
Abstract
An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below corner portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.
Claims15
A dry etching apparatus comprising:
- a first electrode;
- an evacuable chamber;
- a plurality of second electrodes in said chamber, said plurality of second electrode being independent from each other;
- and
- a plurality of high-power sources,
- wherein said high-frequency power sources are independently connected to each of said first electrode and said plurality of second electrodes, and
- wherein a material film on a substrate disposed on said plurality of second electrodes is etched by plasma generated between said first electrode and said plurality of second electrodes.
A dry etching apparatus comprising:
- a first electrode formed of a plane coil;
- an evacuable chamber;
- a plurality of second electrodes in said chamber, said plurality of second electrode being independent from each other;
- a first high-power source connected to said first electrode;
- and
- a plurality of second high-power sources independently connected to each of said plurality of second electrode,
- wherein said material film on a substrate disposed on said plurality of second electrodes is etched using plasma generated by application of an AC electric field between said first electrode and said plurality of second electrodes.
15-25. (canceled)
Dependencies are inferred from the claim text.