Plasma processing method for working the surface of semiconductor devices
OwnerTakao Arase, Motohiko Yoshigai +4inventors
InventorsTakao Arase, Motohiko Yoshigai, Go Saito, Masamichi Sakaguchi, Hiroaki Ishimura, Takahiro Shimomura
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Abstract
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
Claims7
A plasma processing apparatus for selectively etching a silicon nitride layer on a silicon oxide layer formed on a substrate as a sample, using plasma, said apparatus comprising:
- a vacuum vessel;
- a sample stage constituting an electrode, for mounting said sample;
- a power supply for applying a radio-frequency bias voltage to said sample stage;
- and
- means for supplying a halogen-containing gas into said vacuum vessel,
- wherein an aluminum-containing material is disposed in a part or the entire surface exposed to said plasma in said vacuum vessel.
A plasma processing apparatus for selectively etching a silicon nitride layer on a silicon oxide layer formed on a substrate as a sample, using plasma, said apparatus comprising:
- a vacuum vessel;
- a sample stage constituting an electrode, for mounting said sample;
- a power supply for applying a radio-frequency bias voltage to said sample stage;
- means for supplying a halogen-containing gas into said vacuum vessel;
- and
- means for supplying an aluminum-containing gas into said vacuum vessel.
A plasma processing apparatus for selectively etching a silicon nitride layer on a silicon oxide layer formed on a substrate as a sample, using plasma, said apparatus comprising:
- a vacuum vessel;
- a sample stage constituting an electrode, for mounting said sample;
- a power supply for applying a radio-frequency bias voltage to said sample stage;
- means for supplying a halogen-containing gas into said vacuum vessel;
- and
- means for supplying a silicon-containing gas into said vacuum vessel.
Dependencies are inferred from the claim text.