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US 2006/0048711 A1Published application
Systems and methods of forming tantalum silicide layers
AssigneeMicron Technology, Inc.
InventorBrian Vaartstra
Life of this patent
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Abstract
A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.
Claims18
1-46. (canceled)
A vapor deposition apparatus comprising:
- a vapor deposition chamber having a substrate positioned therein;
- and
- one or more vessels comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- and
- one or more vessels comprising one or more silicon precursor compounds.
2 more elements
(canceled)
An atomic layer deposition system comprising:
- a vapor deposition chamber having positioned therein a substrate comprising a silicon-containing surface;
- one or more vessels comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- and
- one or more vessels comprising one or more silicon precursor compounds, with the proviso that the system does not include one or more nitrogen precursor compounds.
1 more element
An atomic layer deposition system comprising:
- a vapor deposition chamber having positioned therein a semiconductor substrate or substrate assembly comprising a silicon-containing surface;
- one or more vessels comprising one or more tantalum precursor compounds of the formula TaY5 (Formula I), wherein each Y is independently a halogen atom;
- and
- one or more vessels comprising one or more silicon precursor compounds, with the proviso that the system does not include one or more nitrogen precursor compounds.
1 more element
Dependencies are inferred from the claim text.