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US 2006/0048376 A1Published application
Forming ferroelectric polymer memories
OwnerEbrahim Andideh, Mark Isenberger +2inventors
InventorsEbrahim Andideh, Mark Isenberger, Michael Leeson, Mani Rahnama
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Abstract
In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.
Claims27
A method comprising:
- coating a first metal layer with hexamethyldisilazane;
- forming a layer of polymer over said coating, said polymer to act as a ferroelectric polymer in a ferroelectric polymer memory;
- and
- plasma etching a second metal layer formed over said polymer using a gas mixture including helium, said metal layers and polymer layer to form a first layer of ferroelectric polymer memory.
1 more element
A method comprising:
- forming a ferroelectric polymer over a first metal layer, said first metal layer patterned to form metal bitlines, said ferroelectric polymer to extend over said bitlines and downward between said bitlines toward an underlying substrate;
- and
- forming a second metal layer over said ferroelectric polymer layer, said second metal layer to be patterned to form row lines that extend transverse to said bitlines.
A method comprising:
- forming a layer of a polymer over a first metal layer coated with hexamethyldisilazane, said polymer to enable data storage in a ferroelectric polymer memory;
- plasma etching a second metal layer formed over said polymer, said plasma etching using a gas mixture including helium;
- and
- after said etching, forming a polyimide layer over said second metal layer.
1 more element
The method of claim 21 including forming a plurality of bitlines over a semiconductor structure.
Dependencies are inferred from the claim text.