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US 2006/0046552 A1Published application
Micro-connector structure and fabricating method thereof
AssigneeSolidlite Corporation
InventorHsing Chen
Life of this patent
Estimating the term…
Abstract
MICRO-CONNECTOR STRUCTURE AND method of making the same are disclosed. The micro-connector is microminiaturized and improved its degree of compaction by using semiconductor process. The process is etching silicon substrates into V-shaped channels and then a layer of nanometer structure is grown on them to increase stability of conductivity.
Claims13
A structure of a micro-connector comprising:
- a first substrate comprising a plurality of ridged lands either in triangle or in trapezoid shape with a first insulation layer, a first conductive layer and a first nano-meter structure layer formed thereon, a plurality of first conductive metal bands, a first fixing layer and a plurality of first ribbon wires, wherein said first conductive metal bands respectively connect said first ribbon wires to said ridged lands, and said first fixing layer is used to secure said first ribbon wires onto said first substrate;
- and
- a second substrate comprising a plurality of grooves either in V-shape or U-shape with a second insulation layer, a second conductive layer formed thereon, a plurality of second conductive, metal bands, a second fixing layer and a plurality of second ribbon wires, wherein said second conductive metal bands respectively connect said second ribbon wires to said grooves, and said second fixing layer is used to secure said second ribbon wires onto said first substrate, and
- wherein said grooves respectively match said ridged lands when the first and the second substrate are combined.
1 more element
A method of making a mini-connector comprising by combining a first substrate with a second substrate:
- lithographing and etching said first substrate to form a plurality of ridged lands at front half of said first substrate;
- forming a first insulation layer on said ridged lands;
- plating a first conductive layer on said first insulation layer;
- coating a thin film of first nano-meter line catalyst on said first conductive layer;
- forming a nano-meter structure layer on top of said first catalyst film;
- plating a plurality of first conductive metal bands at the other non-land half of said first substrate for extending from the edge of said first substrate to said ridged lands so as to connect the first metal bands and the ridged lands respectively;
- connecting a plurality of first ribbon wires to said first metal bands, respectively;
- forming a first fixing layer to secured said first ribbon wires to said first metal bands;
- lithographing and etching a plurality of V-shaped grooves at front half of said second substrate;
- forming a second insulation layer on said V-shaped grooves;
- plating a second conductive layer on said second insulation layer;
- plating a plurality of second conductive metal bands at the other non-groove half of said second substrate for extending from the edge of said second substrate to said V-shaped grooves so as to connect the second metal bands and the V-shaped grooves respectively;
- connecting a plurality of second ribbon wires to said first metal bands, respectively;
- forming a second fixing layer to secured said second ribbon wires to said second metal bands;
- and
- combining said ridged lands and V-shaped grooves of said first and said second substrates respectively to form connection.
13 more elements
Dependencies are inferred from the claim text.