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US 2006/0040586 A1Published application
Method and apparatus for polishing a semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorKentarou Arai
Life of this patent
Estimating the term…
Abstract
A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference to the measured initial thickness value. The first and second inter-positions are predetermined taking into account any variation in the initial thickness of the semiconductor wafer. A polishing process is carried out under control to a motion of a polishing pad toward a stage, on which the semiconductor pad is held.
Claims19
A method for polishing a semiconductor wafer comprising:
- placing the semiconductor wafer on a stage, the semiconductor wafer having a first surface opposite said stage;
- configuring a polishing pad to polish said first surface;
- predetermining first and second correction values;
- predetermining a first moving speed and a second moving speed being lower than said first moving speed;
- measuring an initial thickness of the semiconductor wafer on said first surface to obtain a measured initial thickness value;
- setting a first inter-position between a predetermined stand-by position and said semiconductor wafer, said first inter-position being distanced from said first surface by a first sum of said measured initial thickness value and said first correction value;
- setting a second inter-position between said stand-by position and said first surface, said second inter-position being distanced from said first surface by a first remainder obtained by subtracting said second correction value from said measured initial thickness value;
- causing said polishing pad to move at said first moving speed from said stand-by position to said first inter-position;
- changing said first moving-speed to said second moving speed when said polishing pad reaches said first inter-position;
- causing said polishing pad to move at said second moving speed from said first inter-position toward said semiconductor wafer until said polishing pad reaches said semiconductor wafer;
- and
- conducting an initial polishing process to polish said semiconductor wafer by said polishing pad while maintaining said second moving speed until said polishing pad reaches said second inter-position.
9 more elements
An apparatus comprising:
- a stage having a first surface being configured to hold a semiconductor wafer having a polishing surface arranged opposite said stage;
- a polishing pad being configured to polish said polishing surface;
- a detector being configured to detect a first level of said polishing surface and a second level of said first surface to measure an initial thickness of said semiconductor wafer with reference to said first and second levels;
- and
- a controller being coupled to said polishing pad and said detector to control a motion of said polishing pad toward said first surface with reference to said initial thickness.
2 more elements
A method for polishing a polishing surface of a semiconductor wafer on a first surface of a stage with a polishing pad, said method comprising:
- detecting a first level of said polishing surface and a second level of said first surface to measure an initial thickness of said semiconductor wafer with reference to said first and second levels;
- and
- polishing said polishing surface by controlling a motion of said polishing pad toward said first surface with reference to said initial thickness.
A system for controlling a polishing process for polishing, with a polishing pad, and a semiconductor wafer on a first surface of a stage, said system including:
- a first measuring unit being configured to measure an initial thickness of said semiconductor wafer on said first surface to obtain a measured initial thickness value;
- and
- a first control unit being coupled to said first measuring unit to predetermine first and second correction values, a first moving speed, and a second moving speed being lower than said first moving speed,
- said first control unit further setting a first inter-position between a predetermined stand-by position and said semiconductor wafer, said first inter-position being distanced from said first surface by a first sum of said measured initial thickness value and said first correction value,
- said first control unit further setting a second inter-position between said stand-by position and said first surface, said second inter-position being distanced from said first surface by a first remainder obtained by subtracting said second correction value from said measured initial thickness value,
- said first control unit further being coupled to said polishing pad to cause said polishing pad to move at said first moving speed from said stand-by position to said first inter-position,
- said first control unit further changing said first moving-speed to said second moving speed when said polishing pad reaches said second inter-position,
- said first control unit further causing said polishing pad to move at said second moving speed from said second inter-position toward said semiconductor wafer until said polishing pad reaches said semiconductor wafer, and
- said first control unit further conducting an initial polishing process to polish said semiconductor wafer by said polishing pad while maintaining said second moving speed until the polishing pad reaches said second inter-position.
6 more elements
Dependencies are inferred from the claim text.