US 2006/0040502 A1Published application

Method for manufacturing semiconductor device

OwnerHiroyuki Fukumizu, Shingo Hondainventors

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Abstract

A wiring material film is formed by depositing a first conductive barrier film, an aluminum film, and a second conductive barrier film on a semiconductor substrate in this order. An organic material film, a silicon oxide film and a resist film are formed on the surface of the second barrier film in this order. A resist pattern is formed on silicon oxide film. A pattern of the silicon oxide film is formed on the surface of the organic material film by etching the silicon oxide film with a process gas containing at least fluorine using the resist pattern as a mask. The substrate is treated with a plasma of a process gas containing C before exposing the substrate to air after forming the pattern of the organic material film on the surface of the conductive barrier film by etching the organic material film.

Claims18

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming a wiring material film of a stacked structure by depositing a first conductive barrier film, an aluminum film or an aluminum alloy film, and a second conductive barrier film on a semiconductor substrate in this order;
forming an organic material film, a silicon oxide film and a resist film on the surface of the second barrier film in this order;
forming a resist pattern on the surface of the silicon oxide film by patterning the resist film by lithography;
forming a pattern of the silicon oxide film on the surface of the organic material film by etching the silicon oxide film with a process gas containing at least fluorine using the resist pattern as a mask;
treating the substrate with a plasma of a process gas containing C, a process gas containing H or a process gas containing O before exposing the substrate to air after forming the pattern of the organic material film on the surface of the conductive barrier film by etching the organic material film with a process gas containing H and N using the pattern of the silicon oxide film as a mask;
and
forming a wiring by etching the wiring material film using the patterns of the silicon oxide film and organic material film as masks.

4 more elements

A method for manufacturing a semiconductor device, comprising:

forming a wiring material film of a stacked structure by depositing a first conductive barrier film, an aluminum film or an aluminum alloy film and a second conductive barrier film on a semiconductor substrate in this order;
forming an organic material film, a silicon oxide film and a resist film on the surface of the second conductive barrier film in this order;
forming a resist pattern on the surface of the silicon oxide film by patterning the resist film by lithography;
forming a pattern of the silicon oxide film on the surface of the organic material film by etching the silicon oxide film with a process gas containing at least fluorine using the resist pattern as a mask;
providing a plasma etching apparatus comprising a vacuum chamber and two plate electrodes arranged in the vacuum chamber so as to parallel each other;
holding the semiconductor substrate having the pattern of the silicon oxide film on one plate electrode in the vacuum chamber of the plasma etching apparatus;
introducing a process gas containing O in the vacuum chamber;
adjusting the pressure in the chamber to 1 Pa or less;
generating an oxygen plasma in the chamber by applying a high frequency power to the other plate electrode to selectively etch the organic material film using the pattern of the silicon oxide film as a mask, thereby forming a pattern of the organic material film on the surface of the conductive barrier film;
and
forming a wiring by etching the wiring material film using the patterns of the silicon oxide film and organic material film as masks.

8 more elements

Dependencies are inferred from the claim text.