US 2006/0040501 A1Published application

Integrated dual damascene RIE process with organic patterning layer

AssigneeInternational Business Machines Corporation

InventorsWilliam America, Steven Johnston

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Abstract

A dual damascene conductor structure is formed on a substrate with an exposed conductor on top covered by a buried cap, a dielectric layer (DL) and an organic layer (OL). Form trench patterning hard mask and via hard mask layers over the OL. Form a trench pattern hole through the via hard mask layer; and form a via pattern hole through the via hard mask layer and the trench hard mask layer. Etch the via pattern hole into the OL and then etch a via pattern hole into the DL. Etch away the trench pattern layer below the trench pattern hole. Etch away the OL layer below the trench pattern hole. Etch the via hole through the DL exposing the cap while simultaneously partially etching the DL to a final trench depth to form a trench into the DL below the trench pattern hole, with the trench having a bottom above the cap and sidewalls in the DL.

Claims20

Dependent claims

A method of forming a dual damascene conductor structure comprising:

providing a substrate having a top surface with an electrical conductor exposed on said top surface;
forming a cap layer having a bottom surface located above said top surface of said substrate, forming a dielectric layer having a bottom surface located above said cap layer;
forming an organic (OL) layer over the dielectric layer;
forming a trench patterning hard mask layer and a via hard mask layer over the organic layer;
forming a trench patterning hole through the via hard mask layer;
and forming a via patterning hole through the via hard mask layer and the trench hard mask layer;
etching said via patterning hole through said organic layer and then etching said via patterning hole into said dielectric layer;
etching away said trench patterning layer below said trench patterning hole and then etching away said organic (OL) layer below said trench patterning hole;
and
etching said via hole through said bottom of said dielectric layer to said cap layer while partially etching said trench into said dielectric layer below said trench patterning hole with said trench having a bottom and sidewalls in said dielectric layer with said bottom being spaced above said cap layer;
and
etching through said cap layer below said via hole to expose said conductor.

9 more elements

A method of forming a dual damascene conductor structure comprising:

providing a substrate having a top surface with an electrical conductor exposed on said top surface, with a buried cap layer covering said top surface and said conductor;
and
forming a dielectric layer having a bottom surface located above said top surface of said substrate;
forming a glass layer over said dielectric layer and forming an organic (OL) layer over said glass layer;
forming a trench patterning hard mask layer and a via hard mask layer over said organic layer;
forming a trench patterning hole through said via hard mask layer;
and forming a via patterning hole through said via hard mask layer and said trench hard mask layer;
etching said via patterning hole through said organic (OL) layer and then etching said via patterning hole into said dielectric layer;
etching away said trench patterning layer below said trench patterning hole and then etching away said organic (OL) layer below said trench patterning hole;
etching said via hole through said bottom of said dielectric layer exposing said cap layer while partially etching said trench into said dielectric layer below said trench patterning hole with said trench having sidewalls and a bottom in said dielectric layer, with said bottom being at a final trench depth spaced above said cap layer;
etching through said cap layer below said via hole to expose said conductor;
and
forming a dielectric liner layer on sidewalls of said trench and forming a conductor inside said sidewalls in said trench.

10 more elements

Dependencies are inferred from the claim text.