US 2006/0040496 A1 · METHOD OF FORMING A MATERIAL FILM

Abstract

A method of forming a material film is provided. A chemical vapor deposition (CVD) chamber including therein a showerhead coupled to a gas source and a pedestal coupled to a heater is provided. The showerhead is coupled to a radio frequency (RF) power source. A substrate is positioned on the pedestal. The substrate is then heated by the heater. A tantalum-containing organic metal precursor gas is flowed into the CVD chamber through the showerhead with the RF power source being off, thereby depositing a material film on the heated substrate. Thereafter the RF power source is turned on to output a RF power. An inert gas is flowed into the chamber. The material film in-situ plasma treated within the CVD chamber by providing the RF power to the inert gas. The substrate is removed out of the CVD chamber.

Claims23

Dependent claims

A method of forming a material film, comprising:

providing a chemical vapor deposition (CVD) chamber comprising therein a showerhead coupled to a gas source and a pedestal coupled to a heater, wherein said showerhead is further coupled to a radio frequency (RF) power source;
positioning a substrate on said pedestal;
heating said substrate by said heater;
flowing a tantalum-containing organic metal precursor gas into said CVD chamber through said showerhead with said RF power source being off, thereby depositing a material film on said heated substrate;
thereafter turning on said RF power source to output a RF power;
flowing an inert gas into said chamber;
in-situ plasma treating said material film within said CVD chamber by providing said RF power to said inert gas;
and
removing said substrate out of said CVD chamber.

6 more elements

Dependencies are inferred from the claim text.

Method of forming a material film

Life of this patent

Method of forming a material film

Life of this patent

Abstract

Claims23