Semiconductor device, method for manufacturing the same, and plating solution
AssigneeEbara Corporation
InventorsHiroaki Inoue, Norio Kimura, Xinming Wang, Moriji Matsumoto, Makoto Kanayama
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Abstract
The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.
Claims46
1-50. (canceled)
A semiconductor device having an embedded interconnect structure, comprising a protective film formed on surfaces of exposed interconnects, wherein the protective film has a flattened surface.
A semiconductor device having an embedded interconnect structure, comprising an interconnects-protective film formed selectively on surfaces of exposed interconnects, wherein the interconnects-protective film has an amorphous phase.
A semiconductor device having an embedded interconnect structure, comprising an interconnects-protective film formed selectively on surfaces of exposed interconnects, wherein the interconnects-protective film is a non-magnetic film.
A semiconductor device having an embedded interconnect structure, comprising a protective film formed selectively on surfaces of exposed interconnects, wherein the protective film is obtained by a process comprising performing a pre-treatment on surfaces of exposed interconnects, and then forming the protective film selectively on such pre-treated surfaces of the exposed interconnects.
A semiconductor device comprising interconnects composed of a copper alloy, with the interconnects having been formed by embedding the copper alloy in fine recesses provided in a surface of a substrate, wherein the copper alloy is an alloy of copper and a metal that does not form a solid solution with copper.
A semiconductor device having an embedded interconnect structure, comprising a protective film composed of a copper alloy formed selectively on surfaces of exposed interconnects, wherein the copper alloy is an alloy of copper and a metal that does not form a solid solution with copper.
An apparatus for manufacturing a semiconductor device, comprising:
- a first plating unit for embedding an electrical conductor into recesses provided in a surface of a substrate;
- a first polishing unit for polishing the electrical conductor from the surface of the substrate in which the electrical conductor is embedded;
- a second plating unit for forming a protective film selectively on surfaces of exposed interconnects that define the electrical conductor, after the polishing;
- and
- a second polishing unit for polishing the protective film.
A plating solution comprising copper ions, metal ions of a metal, said metal being capable of forming with copper a copper alloy that does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.
A method for manufacturing a semiconductor device, comprising:
- providing an insulating film having recesses therein which are partially filled by a seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- electroless plating a material onto exposed surfaces of said interconnects, thereby selectively forming a protective film on said exposed surfaces;
- and
- flattening a surface of said protective film to eliminate unevenness of a thickness of said protective film and to remove an overhanging portion of said protective film.
A method for manufacturing a semiconductor device, comprising:
- providing an insulating film having recesses therein which are partially filled by a seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- cleaning said surface of said substrate with a cleaning liquid containing an alkaline surfactant to reduce an electrical conductor contamination on said insulating film;
- and
- electroless plating a material onto exposed surfaces of said interconnects, thereby selectively forming a protective film on said exposed surfaces.
A method for manufacturing a semiconductor device, comprising:
- providing an insulating film having recesses therein which are partially filled by a seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- cleaning said surface of said substrate with a cleaning liquid to reduce an electrical conductor contamination on said insulating film;
- electroless plating a material onto exposed surfaces of said interconnects, thereby selectively forming a protective film on said exposed surfaces;
- and
- flattening a surface of said protective film to eliminate unevenness of a thickness of said protective film and to remove an overhanging portion of said protective film.
A method for manufacturing a semiconductor device, comprising;
- providing an insulating film having recesses therein which are partially filled with a first seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said first seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said first seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- electroless plating a Co—B alloy onto exposed surfaces of said interconnects, thereby selectively forming on said exposed surfaces a second seed layer of a Co—B alloy;
- and
- directly electroless plating a material onto a surface of said second seed layer, thereby forming a protective film on said surface of said second seed layer,
- with said Co—B alloy acting as a catalyst during the electroplating of said material onto said surface of said second seed layer.
A method for manufacturing a semiconductor device, comprising:
- providing an insulating film having recesses therein which are partially filled with a first seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said first seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said first seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- electroless plating onto exposed surfaces of said interconnects, thereby selectively forming on said exposed surfaces a second seed layer of a film having an amorphous phase;
- and
- directly electroless plating a material onto a surface of said second seed layer, thereby forming a protective film on said surface of said second seed layer,
- with said film having said amorphous phase acting as a catalyst during the electroplating of said material onto said surface of said second seed layer.
A method for manufacturing a semiconductor device, comprising:
- providing an insulating film having recesses therein which are partially filled with a first seed layer that covers a surface of said insulating film;
- plating an electrically conductive material onto said first seed layer so as to embed said electrically conductive material in said recesses;
- removing said electrically conductive material and said first seed layer from said surface of said insulating film, whereby interconnects of said electrically conductive material are formed in said insulating film;
- electroless plating onto exposed surfaces of said interconnects, thereby selectively forming on said exposed surfaces a second seed layer of a non-magnetic film;
- and
- directly electroless plating a material onto a surface of said second seed layer, thereby forming a protective film on said surface of said second seed layer,
- with said non-magnetic film acting as a catalyst during the electroplating of said material onto said surface of said second seed layer.
Dependencies are inferred from the claim text.