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AssigneeSamsung Electronics Co., Ltd.
InventorsJang-Eun Lee, Sung-Lae Cho, Jeong-Hee Park
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Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including semiconductor memory devices such as phase change semiconductor memory devices. An example method forms a small via structure by forming a conductive layer on a semiconductor substrate. A molding insulating layer is formed on the conductive layer and a via hole is formed through the insulating layer to expose a region of the conductive layer. A first via filling layer is formed and then partially removed to form a partial via plug. The formation and removal of the phase change material layer are then repeated as necessary to form a multilayer plug structure that substantially fills the via hole with the multilayer structure typically exhibiting reduced defects and damage than plug structures prepared by conventional methods.
A method of forming a plug structure, comprising:
A method of fabricating a phase change memory device, comprising, in order:
Dependencies are inferred from the claim text.