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US 2006/0040480 A1Published application
Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition
AssigneeMicron Technology, Inc.
InventorsGaro Derderian, Donald Westmoreland, Stefan Uhlenbrook
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Abstract
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
Claims93
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- and
- contacting the vapor comprising the at least one precursor compound of Formula I with the semiconductor substrate or substrate assembly to form a metal-containing layer on at least one surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
7 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- providing at least one reaction gas;
- and
- contacting the vapor comprising the at least one precursor compound of Formula I with the semiconductor substrate or substrate assembly to form a metal-containing layer on at least one surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
8 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- directing the vapor comprising the at least one precursor compound of Formula I to the semiconductor substrate or substrate assembly and allowing the at least one compound to chemisorb to at least one surface of the semiconductor substrate or substrate assembly;
- providing at least one reaction gas;
- and
- directing the at least one reaction gas to the semiconductor substrate or substrate assembly with the chemisorbed species thereon to form a metal-containing layer on at least one surface of the semiconductor substrate or substrate assembly.
9 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- providing a vapor comprising at least one metal-containing precursor compound different than M(OR1)5-x(XR2O)x (Formula I);
- directing the vapor comprising the at least one precursor compound of Formula I and the vapor comprising the at least one metal-containing precursor compound different that the precursor compound of Formula I to the semiconductor substrate or substrate assembly to form a metal-containing layer on at least one surface of the semiconductor substrate or substrate assembly using an atomic layer deposition process comprising a plurality of deposition cycles.
7 more elements
A method of forming a niobium oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is niobium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- and
- contacting the vapor comprising the at least one precursor compound with the substrate to form a niobium oxide layer on at least one surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
7 more elements
A method of forming a niobium oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is niobium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- providing at least one reaction gas;
- and
- contacting the vapor comprising the at least one precursor compound with the substrate to form a niobium oxide layer on at least one surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
8 more elements
A method of forming a niobium oxide layer on a substrate, the method comprising:
- providing a substrate within a deposition chamber;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-xX(XR2O)x (Formula I),
- wherein:
- M is niobium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- directing the vapor comprising the at least one precursor compound of Formula I to the substrate and allowing the at least one compound to chemisorb to at least one surface of the substrate;
- providing at least one reaction gas;
- and
- directing the at least one reaction gas to the substrate with the chemisorbed species thereon to form a niobium oxide layer on at least one surface of the substrate.
9 more elements
A method of forming a niobium oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing a vapor comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is niobium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- providing a vapor comprising at least one metal-containing precursor compound different than M(OR1)5-x(XR2O)x (Formula I);
- directing the vapor comprising the at least one precursor compound of Formula I and the vapor comprising the at least one metal-containing precursor compound different that the precursor compound of Formula I to the substrate to form a layer comprising niobium oxide on at least one surface of the substrate using an atomic layer deposition process comprising a plurality of deposition cycles.
7 more elements
A method of manufacturing a memory device structure, the method comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group,
- x=1 or 2;
- vaporizing the at least one precursor compound of Formula I;
- contacting the at least one vaporized precursor compound of Formula I with the substrate to chemisorb the compound on the first electrode of the substrate;
- providing at least one reaction gas;
- contacting the at least one reaction gas with the substrate with the chemisorbed compound thereon to form a dielectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
11 more elements
An atomic layer vapor deposition apparatus comprising:
- a deposition chamber having a substrate positioned therein;
- and
- at least one vessel comprising at least one precursor compound of the formula
- M(OR1)5-x(XR2O)x (Formula I),
- wherein:
- M is selected from the group consisting of niobium and vanadium,
- X is (NR3R4), (PR3R4), or (OR5),
- each R1, R2, R3, R4, and R5 is independently an organic group, and
- x=1 or 2.
6 more elements
Dependencies are inferred from the claim text.