Method and apparatus for forming expitaxial layers
AssigneeNXP B.V.
InventorsPhilippe Meunier-Beillard, Mathieu Caymax
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Abstract
The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus (10) comprising a chamber (12) having a gas input port (14) and a gas output port (16), and means (18) for mounting a silicon substrate within the chamber (12), said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.
Claims16
A method of manufacturing a semiconductor device comprising the step of depositing an epitaxial layer based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, and including employing nitrogen or a noble gas as a carrier gas.
A method as claimed in any one of the preceding claims, which is carried out at a low temperature.
Chemical Vapor Deposition apparatus comprising a chamber having a gas input port and a gas output port, and means for mounting a silicon substrate within the chamber, said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.
Dependencies are inferred from the claim text.