Multi-chamber MOCVD growth apparatus for high performance/high throughput

A method of conducting multiple step multiple chamber vapor deposition while avoiding reactant memory in the relevant reaction chambers, the method comprising:

• depositing a layer of a first semiconductor material on a substrate using vapor deposition in a first deposition chamber;
• purging the first deposition chamber to reduce vapor deposition source gases remaining in the first deposition chamber following the deposition growth and prior to opening the chamber;
• transferring the substrate to a second deposition chamber while isolating the first deposition chamber from the second deposition chamber to thereby prevent reactants present in the first chamber from affecting deposition in the second chamber and while maintaining the substrate in an ambient that minimizes or eliminates growth stop effects;
• thereafter depositing a second layer of a different semiconductor material on the substrate in the second chamber using vapor deposition;
• purging the second deposition chamber to reduce vapor deposition source gases remaining in the second deposition chamber following the deposition growth and prior to opening the second deposition chamber;
• transferring the substrate to the first deposition chamber while isolating the second deposition chamber from the first deposition chamber to thereby prevent reactants present in the second chamber from affecting deposition in the first deposition chamber and while maintaining the substrate in an ambient that minimizes or eliminates growth stop effects;
• and
• thereafter depositing an additional layer of the first semiconductor material on the second deposited layer in the first chamber using vapor deposition.

A method of conducting multiple step multiple chamber vapor deposition while avoiding reactant memory in the relevant reaction chambers, the method comprising:

• depositing a layer of semiconductor material on a substrate using vapor deposition in a first deposition chamber;
• purging the first deposition chamber to reduce vapor deposition source gases remaining in the first deposition chamber following the deposition growth and prior to opening the chamber;
• transferring the substrate to a second deposition chamber while isolating the first deposition chamber from the second deposition chamber to thereby prevent reactants present in the first chamber from affecting deposition in the second chamber and while maintaining the substrate in an ambient that minimizes or eliminates growth stop effects;
• thereafter depositing a second layer of a different semiconductor material on the first deposited layer in the second chamber using vapor deposition while baking out the first deposition chamber to remove any reactants present from the first deposition step;
• purging the second deposition chamber to reduce vapor deposition source gases remaining in the second deposition chamber following the deposition growth and prior to opening the chamber;
• transferring the substrate to the first deposition chamber while isolating the second deposition chamber from the first deposition chamber to thereby prevent reactants present in the second chamber from affecting deposition in the first chamber and while maintaining the substrate in an ambient that minimizes or eliminates growth stop effects;
• and
• thereafter depositing an additional layer of a third semiconductor material on the second deposited layer in the first chamber using vapor deposition.

An apparatus for reducing reactant memory during vapor deposition growth of semiconductor materials, said apparatus comprising:

• two vapor deposition growth processing chambers for conducting chemical vapor deposition of a semiconductor material on a substrate;
• a transfer chamber between and in communication with said deposition chambers for conveying a substrate between said deposition chambers without passing the substrate directly from one of said chambers to the other;
• two process isolation valves each of which is in communication with one of said respective deposition chambers and both of which are in communication with said transfer chamber for isolating said deposition chambers from said transfer chamber during vapor deposition growth in said chambers;
• and
• means for conveying a substrate from one of said deposition chambers to said transfer chamber and thereafter from said transfer chamber to the other of said deposition chambers.

An apparatus for reducing reactant memory during vapor deposition growth of semiconductor materials, said apparatus comprising:

• at least one vapor deposition processing chamber for conducting chemical vapor deposition of n-type epitaxial layers on a substrate or previously deposited layer,
• at least one vapor deposition processing chamber for conducting chemical vapor deposition of p-type epitaxial layers on a substrate or previously deposited layer,
• at least one transfer chamber for transferring a substrate between said vapor deposition processing chambers
• at least two process isolation valves, each of which is in communication with one of said respective deposition chambers and both of which are in communication with said transfer chamber for isolating said deposition chambers from said transfer chamber during vapor deposition growth in said chambers,
• a means for transferring a substrate from one of said deposition chambers to said transfer chamber and thereafter from said transfer chamber to other of said deposition chambers.