Method of forming a capacitor
AssigneeHynix Semiconductor Inc.
InventorYoung-Soo Kim
Life of this patent
Estimating the term…
Abstract
The present invention relates to a method for fabricating a capacitor employing ALD-TiN as an upper electrode and being suitable for preventing a deterioration of a leakage current property which uses an ALD-TiN as an upper electrode. The method for fabricating the capacitor includes: forming a lower electrode on a semiconductor substrate; forming a dielectric layer on the lower electrode; loading the semiconductor substrate containing the dielectric layer into a deposition chamber; nitriding a surface of the dielectric layer while NH3 gas is flowed into the deposition chamber; and forming an upper layer by using a source gas NH3, containing Titanium (Ti) on the nitrated surface of the dielectric layer through an atomic layer deposition (ALD) method.
Claims5
A method for forming a capacitor comprising the steps of:
- a1) loading a semiconductor substrate containing a dielectric layer formed on a lower electrode into a deposition chamber;
- and
- b1) forming an upper electrode containing Titanium (Ti) on the dielectric layer through an atomic layer deposition (ALD) method using a first source gas including TiCl4 and a second source gas NH3, wherein at least one of a TiCl4 flow rate or a TiCl4 feeding time is controlled to limit the exposure of the dielectric layer to TiCl4 gas until at least an ALD-TiN monolayer has been formed on the dielectric layer.
Dependencies are inferred from the claim text.