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US 2006/0040459 A1Published application
Method to produce thin film resistor with no resistor head using dry etch
OwnerTony Phan, Daniel Tsaiinventors
Life of this patent
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Abstract
A method of fabricating a thin film resistor (100) without a hardmask or resistor head. The resistor material (104), e.g., NiCr, is deposited. The resistor material (104) is patterned and sputter etched to form the resistor body without first depositing a hardmask material. For example, a sputter etch chemistry comprising BCl3, Cl2, and Ar may be used to etch the resistor material.
Claims12
A method of fabricating an integrated circuit, comprising the steps of:
- depositing a layer of resistor material;
- then, without depositing a hardmask layer, forming a pattern on said layer of resistor material;
- and
- sputtering etching said layer of resistor material to form a thin film resistor body.
1 more element
A method of fabricating an integrated circuit, comprising the steps of:
- providing a semiconductor body having a first dielectric layer formed thereover;
- depositing a layer of resistor material over said first dielectric layer;
- then, without depositing a hardmask layer, forming a resistor pattern on said layer of resistor material;
- and
- sputter etching said layer of resistor material to form a resistor body.
2 more elements
A method for fabricating a thin film resistor on a semiconductor body, comprising the steps of:
- depositing an alloy of nickel and chromium over a first dielectric layer;
- and
- then, without depositing a hardmask layer, sputter etching to remove a portion of said alloy to form a resistor body, wherein sputter etching uses an etch chemistry comprising BCl3, Cl2, and Ar.
Dependencies are inferred from the claim text.