Method to produce thin film resistor using dry etch
AssigneeTexas Instruments Incorporated
InventorsTony Phan, Daniel Tsai
Life of this patent
Estimating the term…
Abstract
A method of fabricating a thin film resistor (100). The resistor material (104), e.g., NiCr, is deposited. A hard mask material (106), e.g., TiW, may be deposited over the resistor material (104). The resistor material (104) and hard mask material (106) are patterned and sputter etched to form the resistor body. For example, a sputter etch chemistry comprising BCl3, Cl2, and Ar may be used to etch the resistor material.
Claims18
A method of fabricating an integrated circuit, comprising the steps of:
- depositing a layer of resistor material;
- forming a pattern over said layer of resistor material;
- and
- sputtering etching said layer of resistor material to form a thin film resistor body.
A method of fabricating an integrated circuit, comprising the steps of:
- providing a semiconductor body having a first dielectric layer formed thereover;
- depositing a layer of resistor material over said first dielectric layer;
- depositing a hard mask material over said layer of resistor material;
- forming a resistor pattern over said hard mask material;
- sputter etching said hard mask material;
- and
- sputter etching said layer of resistor material to form a resistor body.
A method for fabricating a thin film resistor on a semiconductor body, comprising the steps of:
- depositing an alloy of nickel and chromium over a first dielectric layer;
- and
- sputter etching to remove a portion of said alloy to form a resistor body, wherein sputter etching uses an etch chemistry comprising BCl3, Cl2, and Ar.
Dependencies are inferred from the claim text.