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US 2006/0040443 A1Published application
Methods of forming capacitor electrodes using fluorine and oxygen
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Il Cho, Jong-Kyu Kim, Byeong-Yun Nam, Kyeong-Koo Chi, Cheol-Kyu Lee
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Abstract
A method of forming a capacitor can include etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode.
Claims20
A method of forming a capacitor comprising:
- etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode.
A method of forming a capacitor comprising:
- forming an insulation layer on a substrate;
- patterning the insulation layer to form a recess therein;
- forming a metal-nitride layer on the first insulation layer and in the recess;
- forming a sacrificial layer on the metal-nitride layer;
- planarizing the sacrificial layer until the metal-nitride layer is exposed;
- and
- plasma etching the metal-nitride layer using an etch gas comprising carbon-fluorine and oxygen to form a capacitor electrode.
4 more elements
A method of forming a capacitor comprising:
- forming an insulation layer on a substrate;
- patterning the insulation layer to form a recess therein;
- forming a metal-nitride layer on the first insulation layer and in the recess;
- forming a sacrificial layer on the metal-nitride layer;
- planarizing the sacrificial layer until the metal-nitride layer is exposed;
- and
- plasma etching the metal-nitride layer using an etch gas comprising carbon-fluorine and oxygen to recess an upper surface of the metal-nitride layer to a level below an adjacent upper surface of the sacrificial layer to form a capacitor electrode.
4 more elements
A method according to claim 20 wherein the upper surface of the metal-nitride layer is substantially planar from a side wall of the sacrificial layer inside the electrode to a side wall of the sacrificial layer outside the electrode.
Dependencies are inferred from the claim text.