US 2006/0040441 A1 · Method of forming an integrated circuit employable with a power converter

Abstract

A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a transistor employable as a switch of a power train of the power converter by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate, forming a heavily doped region adjacent the lightly doped region, and forming an oppositely doped well within the channel region. The method of forming the transistor further includes forming a doped region with a doping concentration profile less than the heavily doped region between the heavily doped region and the oppositely doped well. The method of forming the integrated circuit also includes forming a driver switch of a driver to provide a drive signal to the transistor.

Claims30

Dependent claims

A method of forming an integrated circuit employable with a power converter, comprising:

providing a semiconductor substrate;
forming a transistor employable as a switch of a power train of said power converter, including:
forming a gate over said semiconductor substrate,
forming a source/drain by:
forming a lightly doped region adjacent a channel region recessed into said semiconductor substrate, and
forming a heavily doped region adjacent said lightly doped region,
forming an oppositely doped well under and within said channel region, and
forming a doped region between said heavily doped region and said oppositely doped well, said doped region having a doping concentration profile less than a doping concentration profile of said heavily doped region;
and
forming a driver switch of a driver configured to provide a drive signal to said transistor on said semiconductor substrate.

7 more elements

A method of forming an integrated circuit employable with a power converter, comprising:

providing a semiconductor substrate;
forming a laterally diffused metal oxide semiconductor device employable as a switch of a power train of said power converter, including:
forming a gate over said semiconductor substrate,
forming a source/drain by:
forming a lightly doped region adjacent a channel region recessed into said semiconductor substrate, and
forming a heavily doped region adjacent said lightly doped region,
forming an oppositely doped well under and within said channel region, and
forming a doped region between said heavily doped region and said oppositely doped well, said doped region having a doping concentration profile less than a doping concentration profile of said heavily doped region;
forming a complementary metal oxide semiconductor device employable in a controller configured to provide a signal to control a duty cycle of said laterally diffused metal oxide semiconductor device on said semiconductor substrate;
and
forming a driver switch of a driver configured to provide a drive signal to said laterally diffused metal oxide semiconductor device as a function of said signal from said controller on said semiconductor substrate.

8 more elements

Dependencies are inferred from the claim text.

Method of forming an integrated circuit employable with a power converter

Life of this patent

Method of forming an integrated circuit employable with a power converter

Life of this patent

Abstract

Claims30