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US 2006/0040430 A1Published application
System and method for integrating low schottky barrier metal source/drain
AssigneeTexas Instruments Incorporated
InventorWeize Xiong
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Abstract
According to one embodiment of the invention, a method for integrating low Schottky barrier metal source/drain includes providing a substrate, forming an epitaxial SiGe layer outwardly from the substrate, forming an epitaxial Si layer outwardly from the SiGe layer, and forming a metal source and a metal drain.
Claims20
A method for integrating low Schottky barrier metal source/drain, comprising:
- providing a substrate;
- forming an epitaxial SiGe layer outwardly from the substrate;
- forming an epitaxial Si layer outwardly from the SiGe layer;
- and
- forming a metal source and a metal drain.
2 more elements
A low Schottky barrier metal source/drain structure, comprising:
- a substrate;
- an epitaxial SiGe layer formed outwardly from the substrate;
- an epitaxial Si layer formed outwardly from the SiGe layer;
- and
- a metal source and a metal drain each formed from a metal silicide selected from the group consisting of ErSi and PtSi.
2 more elements
A method for integrating low Schottky barrier metal source/drain, comprising:
- providing a substrate;
- forming an epitaxial SiGe layer outwardly from the substrate;
- forming an epitaxial Si layer outwardly from the SiGe layer;
- removing a portion of the epitaxial Si layer;
- and
- forming a metal source and a metal drain.
3 more elements
A method for integrating low Schottky barrier metal source/drain, comprising:
- providing a substrate;
- forming an epitaxial SiGe layer outwardly from the substrate;
- depositing a high K gate dielectric outwardly from the SiGe layer;
- and
- forming a metal source and a metal drain.
2 more elements
Dependencies are inferred from the claim text.