Fabrication method of thin film transistor

Abstract

The present invention provides a fabrication method of thin film transistor comprising a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the capping layer, a step of diffusing metal catalyst by selectively irradiating a laser beam onto the metal catalyst layer, and a step of crystallizing the amorphous silicon layer. The present invention has an advantage that a fabrication method of thin film transistor is provided, wherein the fabrication method of thin film transistor improves characteristics of device and obtains uniformity of the device by uniformly controlling diffusion of low concentration of metal catalyst through selective irradiation of laser beam and controlling size of grains and crystal growing position and direction in crystallization of amorphous silicon layer using super grain silicon method.

Dependencies are inferred from the claim text.