Method of correcting amplitude defect in multilayer film of EUVL mask
AssigneeSII Nano Technology Inc.
InventorOsamu Takaoka
Life of this patent
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Abstract
By entering a low acceleration Si ion beam of 500 V or lower or a low acceleration Si ion beam of 500 V-2000 V having been slanted such that an injection depth becomes shallow, which has been mass-separated from a liquid alloy ion source containing Si by a mass separator and converged by an ion optical system, the amplitude defect near a surface of the Mo/Si multilayer film or the Mo2C/Si multilayer film is removed by a physical sputter or a gas assist etching such that an interlayer of the Mo/Si multilayer film or the Mo2C/Si multilayer film in a lower layer is not destroyed.
Claims4
A method of correcting an amplitude defect in a multilayer film of an EUVL mask, characterized in that, by a low acceleration Si focused ion beam of 500 V or lower which has been mass-separated from a liquid alloy ion source containing Si, a correction is performed by removing a foreign matter becoming a cause of the amplitude defect and existing near a surface below the surface of an Mo/Si multilayer film or an Mo2C/Si multilayer film, which has been formed in a surface of the EUVL mask, together with the multilayer film on the foreign matter by a physical sputter or a gas assist etching.
A method of correcting an amplitude defect in a multilayer film of an EUVL mask, characterized in that, by slantingly entering a low acceleration Si focused ion beam of 500 V-2000 V which has been mass-separated from a liquid alloy ion source containing Si, a foreign matter becoming a cause of the amplitude defect and existing near a surface below the surface of an Mo/Si multilayer film or an Mo2C/Si multilayer film, which has been formed in a surface of the EUVL mask, is removed together with the multilayer film on the foreign matter by a physical sputter or a gas assist etching.
Dependencies are inferred from the claim text.