Process of cleaning a semiconductor manufacturing system and method of manufacturing a semiconductor device
OwnerHiroomi Tsutaeinventor
Life of this patent
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Abstract
A process of cleaning a semiconductor manufacturing system, and a method of manufacturing a semiconductor device. The cleaning process includes, for example, positioning a ceramic cover on the electrostatic chuck in tight contact with the chuck, and feeding a fluoride-based cleaning gas into a chamber. After the cleaning process, a process of forming a semiconductor film (deposition process) is performed. It is possible to prevent fluorine degasification from a substrate-supporting electrode (electrostatic chuck) during the deposition process. A semiconductor film can be formed without causing a temperature drop near the substrate. This prevents irregular film thickness, defective etching, film flaking, etc.
Claims19
A process of cleaning a semiconductor manufacturing system having a reaction chamber and a substrate-supporting electrode provided inside the reaction chamber, a substrate being located on the substrate-supporting electrode when forming a semiconductor film on the substrate, the process comprising:
- positioning an insulating cover on the substrate-supporting electrode in tight contact with the substrate-supporting electrode;
- and
- supplying a fluoride-based cleaning gas into the reaction chamber and generating a plasma in the reaction chamber.
A process of cleaning a semiconductor manufacturing system having a reaction chamber and a substrate-supporting electrode provided inside the reaction chamber, with a substrate being placed on the substrate-supporting electrode when forming a semiconductor film on the substrate, the process comprising:
- positioning an insulating cover on the substrate-supporting electrode;
- supplying a fluoride-based cleaning gas into the reaction chamber, and supplying at least one of an inert gas and a fluorine-reducing gas into the reaction chamber from an approximate center of the substrate-supporting electrode through a gap between the insulating cover and the substrate-supporting electrode, a pressure in the gap being maintained to be higher than a pressure in the reaction chamber;
- and
- generating a plasma in the reaction chamber.
A process of cleaning a semiconductor manufacturing system having a reaction chamber and a substrate-supporting electrode provided inside the reaction chamber, with a substrate being placed on the substrate-supporting electrode when forming a semiconductor film on the substrate, the process comprising:
- positioning an insulating cover on the substrate-supporting electrode;
- supplying a fluoride-based cleaning gas into the reaction chamber and then generating a plasma in the reaction chamber;
- removing the insulating cover from the substrate-supporting electrode to expose a surface of the substrate-supporting electrode;
- and
- supplying a fluorine-reducing gas into the reaction chamber and generating a plasma.
A process of cleaning a semiconductor manufacturing system having a reaction chamber and a substrate-supporting electrode provided inside the reaction chamber, with a substrate being placed on the substrate-supporting electrode when forming a semiconductor film on the substrate, the process comprising:
- positioning an insulating cover on the substrate-supporting electrode;
- supplying a fluoride-based cleaning gas into the reaction chamber and generating a plasma in the reaction chamber;
- supplying a fluorine-reducing gas into the reaction chamber and then generating a plasma;
- removing the insulating cover from the substrate-supporting electrode to expose a surface of the substrate-supporting electrode;
- and
- forming a silicon oxide film containing an excessive amount of silicon on the surface of the substrate-supporting electrode.
A process of cleaning a semiconductor manufacturing system having a reaction chamber and a substrate-supporting electrode provided inside the reaction chamber, with a substrate being placed on the substrate-supporting electrode when forming a semiconductor film on the substrate, the process comprising:
- supplying hydrogen gas and an inert gas into the reaction chamber and generating a plasma when the semiconductor manufacturing system is in a standby condition before loading the substrate into the reaction chamber.
Dependencies are inferred from the claim text.