Method of data flow control for a high speed memory
AssigneeEtron Technology, Inc.
InventorsDer-Min Yuan, Chiun-Chi Shen
Life of this patent
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Abstract
A new method of increasing access cycle time in a memory device is achieved. The memory device has three operating states of standby, read, and write. The data lines in the memory device may be pre-charged. The method comprises, first, during the standby state, the data lines are pre-charge. Second, during the write state, the data lines are not pre-charged. Third, during the read state, the data lines are not pre-charged. During a transition from the write state to the read state, the data lines are pre-charged.
Claims14
A method of increasing access cycle time in a memory device, wherein said memory device has three operating states of standby, read, and write, and wherein data lines in said memory device may be pre-charged, said method comprising:
- during said standby state, said data lines are pre-charged;
- during said write state, said data lines are not pre-charged;
- during said read state, said data lines are not pre-charged;
- and
- during a transition from said write state to said read state, said data lines are pre-charged.
A method of increasing access cycle time in a memory device, wherein said memory apparatus has three operating states of standby, read, and write, and wherein data lines in said memory may be pre-charged, said method comprising:
- during said standby state, said data lines are pre-charged;
- during said write state, said data lines are not pre-charged;
- during said read state, said data lines are not pre-charged;
- and
- during a transition from said write state to said read state, said data lines are pre-charged wherein said transition from said write state to said read state is an interruption of an ongoing write.
A memory device having increased access cycle time wherein said memory device comprises:
- data lines that may be pre-charged;
- a standby state during which said data lines are pre-charged, a write state during which said data lines are not pre-charged;
- and
- a read state during which said data lines are not pre-charged and wherein a transition from said write state to said read state causes said data lines to be pre-charged.
Dependencies are inferred from the claim text.