Back to results
US 2006/0039209 A1Published application
Semiconductor memory
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshiaki Kawasaki, Masashi Agata, Masanori Shirahama, Ryuji Nishihara
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor memory, comprising: a voltage converting circuit which voltage-converts a resistance difference between a first and a second resistance elements; a voltage comparing circuit which outputs an output corresponding to the voltage conversion; a latch circuit for holding the output of the voltage comparing circuit; and a switch circuit which cuts and connects the voltage converting circuit and the voltage comparing circuit.
Claims20
A semiconductor memory, comprising:
- a voltage converting circuit which voltage-converts a resistance difference between a first and a second resistance elements;
- a voltage comparing circuit which outputs a comparison result corresponding to said resistance difference based on an output of said voltage converting circuit;
- a latch circuit for holding said comparison result of said voltage comparing circuit;
- and
- a switch circuit which cuts or connects an output side of said voltage converting circuit and an input side of said voltage comparing circuit.
2 more elements
A semiconductor memory, comprising:
- a voltage converting circuit which voltage-converts a resistance difference between a first resistance element and a second resistance element;
- a voltage comparing circuit which outputs a comparison result corresponding to said resistance difference based on an output of said voltage converting circuit;
- a latch circuit for holding said comparison result of said voltage comparing circuit;
- a switch circuit which cuts or connects an output side of said voltage converting circuit and an input side of said voltage comparing circuit;
- and
- a resistance margin measuring device for measuring a resistance margin of said first resistance element.
3 more elements
A semiconductor memory, comprising:
- a voltage converting circuit which voltage-converts a resistance difference between a first resistance and a second resistance elements;
- a voltage comparing circuit which outputs a comparison result corresponding to said resistance difference based on an output of said voltage converting circuit;
- a latch circuit for holding said comparison result of said voltage comparing circuit;
- and
- a switch circuit which cuts or connects an output side of said voltage converting circuit and an input side of said voltage comparing circuit, wherein
- said voltage converting circuit comprises:
- a first MOS switch which is connected to said first resistance element;
- and
- a plurality of MOS switches having different driving capacities, which are connected to said second resistance element, wherein
- said plurality of MOS switches are drive-controlled so that conversion voltage level of said second resistance element can be varied.
7 more elements
Dependencies are inferred from the claim text.