System and method for reading a memory cell
AssigneeSamsung Electronics Co., Ltd.
InventorsFrederick Perner, Kenneth Smith, Corbin Champion
Life of this patent
Estimating the term…
Abstract
A method of performing a read operation from a first magnetic random access memory (AM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.
Claims21
A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled in series to a second MRAM cell, the method comprising:
- providing a voltage to a first end of the memory cell string that is closest to the first MRAM cell;
- providing a ground source to a second end of the first memory cell string that is opposite the first end;
- and
- determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current across the first MRAM cell.
7-21. (canceled)
A system comprising:
- means for providing a voltage across a memory cell string that includes a first magnetic random access memory (MRAM) cell coupled in series to a second MRAM cell;
- and
- means for determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current across the first MRAM cell.
A method comprising:
- providing a voltage across a memory cell string that includes a first magnetic random access memory (MRAM) cell coupled in series to a second MRAM cell;
- and
- determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current across the first MRAM cell.
Dependencies are inferred from the claim text.